CQY36N document number 81001 rev. 1.6, 27-nov-06 vishay semiconductors www.vishay.com 1 94 8 63 8 gaas infrared emitting diode in miniature (t-?) package description CQY36N is a standard gaas infrared emitting diode in a miniature top view plastic package. its flat window provides a wide aperture making it ideal for use with external optics. the diode is case compatible to the bpw16n pho- totransistor, allowing the user to assemble his own optical interrupters. features ? suitable for pulse operation ? standard t-? flat miniature package ? wide angle of half intensity ? = 55 ? peak wavelength p = 950 nm ? good spectral matching to si photodetectors ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec applications ? radiation source in near infrared range absolute maximum ratings t amb = 25 c, unless otherwise specified electrical characteristics t amb = 25 c, unless otherwise specified e4 parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma surge forward current t p 100 si fsm 2a power dissipation p v 170 mw junction temperature t j 100 c storage temperature range t stg - 25 to + 100 c soldering temperature t 3 s t sd 245 c thermal resistance junction/ ambient r thja 450 k/w parameter test condition symbol min ty p. max unit forward voltage i f = 50 ma, t p 20 ms v f 1.3 1.6 v breakdown voltage i r = 100 av (br) 5v junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 50 pf
www.vishay.com 2 document number 81001 rev. 1.6, 27-nov-06 CQY36N vishay semiconductors optical characteristics t amb = 25 c, unless otherwise specified typical characteristics t amb = 25 c unless otherwise specified parameter test condition symbol min ty p. max unit radiant intensity i f = 50 ma, t p 20 ms i e 0.7 1.5 7.5 mw/sr radiant power i f = 50 ma, t p 20 ms e 10 mw temp. coefficient of e i f = 50 ma tk e - 0.8 %/k angle of half intensity ? 55 deg peak wavelength i f = 50 ma p 950 nm spectral bandwidth i f = 50 ma ? 50 nm rise time i f = 1.5 a, t p /t = 0.01, t p 10 st r 400 ns fall time i f = 1.5 a, t p /t = 0.01, t p 10 st f 450 ns virtual source diameter ? 1.2 mm figure 1. power dissipatio n vs. ambient temperature figure 2. forward current vs. ambient temperature 0 50 100 150 200 2 5 0 p - po w er dissipation (m w ) v 94 8 029 r thja t am b - am b ient temperat u re (c) 100 8 0 60 40 20 0 0 25 50 75 100 125 94 7916 r thja t am b - am b ient temperat u re (c) 100 8 0 60 40 20 0 f i - for w ard c u rrent (ma) figure 3. forward current vs. forward voltage figure 4. relative forward voltage vs. ambient temperature 94 7996 10 1 10 0 10 2 10 3 10 4 10 -1 i- for w ard c u rrent (ma) f 4 3 2 1 0 v f - for w ard v oltage ( v ) 0.7 0. 8 0.9 1.0 1.1 1.2 v - relati v e for w ard v oltage ( v ) frel 94 7990 t am b - am b ient temperat u re (c) 100 8 0 60 40 20 0 i f = 10 ma
CQY36N document number 81001 rev. 1.6, 27-nov-06 vishay semiconductors www.vishay.com 3 figure 5. radiant intens ity vs. forward current figure 6. radiant power vs. forward current figure 7. rel. radiant intensity/power vs. ambient temperature 94 7917 10 3 10 1 10 2 10 4 10 0 0.1 1 10 100 i f ? for w ard c u rrent (ma) i ? radiant intensity (m w /sr) e 0.1 1 10 100 11 0 100 1000 1371 8 i f - for w ard c u rrent (ma) - radiant po w er (m w ) e - 10 10 50 0 100 0 0.4 0. 8 1.2 1 . 6 i; e rel e rel 140 94 7993 i f = 20 ma t am b - am b ient temperat u re (c) figure 8. relative radiant power vs. wavelength figure 9. relative radiant intensity vs. angular displacement 900 950 0 0.25 0.5 0.75 1.0 1.25 - w a v elength (nm) 1000 94 7994 e rel - relati v e radiant po w er i f = 100 ma 0.4 0.2 0 0.2 0.4 i ? relati v e radiant intensity e rel 0.6 94 7919 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0
www.vishay.com 4 document number 81001 rev. 1.6, 27-nov-06 CQY36N vishay semiconductors package dimensions in mm 96 121 8 9
CQY36N document number 81001 rev. 1.6, 27-nov-06 vishay semiconductors www.vishay.com 5 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releas es of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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